1,000 CFETs, SK Hynix Next-Gen NAND, Interconnects Beyond ...
2 days ago · In this report, as with 2022, 2023, and 2024, we’ll cover highlights from IEDM 2025 to find out what the future of chipmaking might look like. With memory prices exploding, 3D NAND …
IEEE IEDM 2025 | 19-4 | First Demonstration of 2D ...
Dec 6, 2010 · This work highlights the great potential of 2D semiconductors for thermal stability vertical transistors for future CFET logic and 4F2 DRAM applications.
Advances in 2D-material based device technology | imec
Dec 10, 2025 · Replacing Si conduction channels with atomically thin layers made of 2D transition metal dichalcogenides (MX 2) promises to enable ultimate gate and channel length scaling, while …
Highlights from the 2025 IEEE International Electron Devices ...
Dec 5, 2025 · The IEEE International Electron Devices Meeting (IEDM), which takes place in San Francisco in December, is a key forum for reporting developments in semiconductor and electronic …
Interconnects Beyond Copper, 1,000 CFETs, SK Hynix Next-Gen ...
In TSMC’s 2025 IEDM study on 2D FETs, the key lever for improving p-type performance is inserting an interlayer (IL) between the 2D channel and the high-k gate dielectric to reduce the screening and …
Imec presents record WSe<sub>2</sub>-based 2D-pFETs for ...
Dec 15, 2025 · Crucial milestones to be achieved include high-quality 2D-material layer deposition, gate stack integration, low-resistance source/drain contact formation, and 300mm fab integration.
Imec reveals advances in 2D device technology - Compound ...
Dec 10, 2025 · At the 2025 IEEE International Electron Devices Meeting (IEDM), research centre Imec is presenting breakthrough performance of p-type FETs with monolayer WSe 2 channels, and …