Semi-Physics-Based SiC MOSFET Circuit Simulation Model Capable of Extrapolation to High Temperatures
Abstract: In this study, a SiC MOSFET circuit simulation model capable of predicting ultrahigh-temperature operation, including short-circuit conditions, was developed. A fundamental structure ...
Abstract: A simulation-driven surrogate parallel improved adaptive genetic algorithm (SDS-IAGA) method is proposed. This method aims to improve the efficiency of topology optimization for the ...
A new research paper reframes the simulation hypothesis, asking whether reality could be simulated and what science can test.
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