- Contributing to realization and wide spread of implementation in vertical GaN power devices - GaN devices are attracting attention as next-generation devices that combine high device characteristics ...

TOKYO--(BUSINESS WIRE)--Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh) has determined that QST® (Qromis Substrate Technology) substrate*1 is an essential material for ...

The QSTTM substrate*1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) developed, has been adopted ...

Shin-Etsu Chemical announced its entry into the semiconductor manufacturing equipment market with new technology designed to eliminate the need for interposers. This innovation could... Thursday 12 ...

A 200 mm diameter monolithically integrated 650V, E-mode gallium nitride (GaN) half-bridge IC power device wafer (wafer-level integrated low- and high-side transistors, drivers, logic, and sensors) on ...

TOKYO--(BUSINESS WIRE)--OKI (TOKYO: 6703), in collaboration with Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; "Shin-Etsu Chemical"), has announced the successful ...

The QST TM substrate *1, a 300-mm GaN growth substrate that Shin-Etsu Chemical Co., Ltd. (Head Office: Tokyo; President: Yasuhiko Saitoh; hereinafter, “Shin-Etsu Chemical”) developed, has been adopted ...