Business Wire

Infineon Cooli RIGBT Module Structure and Cost Analysis Report - Research and Markets

DUBLIN--(BUSINESS WIRE)--Research and Markets has announced the addition of the "InfineonCooliR²IGBT module: Structure and Cost Analysis" report to their offering. The CooliR²Die innovative power ...
Electronic Design

Infineon Introduces First GaN Power FET to Integrate Schottky Diode

Gallium nitride (GaN) is fast becoming a foundational technology in power electronics, offering higher power density and better efficiency than traditional silicon. By bringing faster switching speeds ...
EDN

Infineon develops SiC diodes for high-frequency power applications

MUNICH — Infineon Technologies AG here today announced it has become the first chip maker to produce power Schottky diodes on silicon-carbide (SiC) substrates. The new diodes can handle a range of 300 ...
EDN

Diode arrays offer high-speed data interface ESD protection

Honolulu, H.I. —Infineon Technologies has developed a low-capacitance TVS (transient voltage suppressor) diode array family that is designed to provide ESD protection for high-speed data interfaces, ...
Electronic Design

Infineon Introduces Third Generation Silicon Carbide Schottky Diodes

Infineon Technologies AG introduced its third generation thinQ!(tm) SiC Schottky diodes. Featuring the industry's lowest device capacitance for any given current rating, which enhances overall system ...